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Ion Implantation for Deep (> 100 ?m) Buried Layers

Wolfgang R. FahrnerD. BräunigM. KnollLaschinski, JR.

出版	ASTM International, 1984
URL	http://books.google.com.hk/books?id=7Nl6zgEACAAJ&hl=&source=gbs_api

註釋The high energy implanter VICKSI is described. Silicon, germanium, gallium arsenide, quartz, and glasses are implanted. Ions are C, N, O, B, and the noble gases. Bare wafers as well as finished devices are used. Characterization is done by: (i) the two point spreading resistance, (ii) the I(V)-I(x)-dI/dx conversion of the two leakage currents of implanted thyristors, (iii) optical absorption of implanted glass, and (iv) the optical reflectivity. Dose and energy dependencies for the induced damage are studied with all four methods. Two peaks are observed for a variety of Si targets (wafer and device), ions, or measurement techniques. The peaks are often hidden behind the background damage and emerge for higher annealing temperatures only. The maxima of the dI/dx vs. x damage profiles are plotted as a function of 1/kT (T being the measurement temperature). The slope -Ea =0.72 eV suggests the creation of E-centers. Damage, ionization, and particle profiles are compared with Monte Carlo data. The fit quality varies between excellent and poor. The discrepancies are attributed to the lack of reliable data for the electronic straggling in the energy range beyond 10 MeV.