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Micro Ring Resonators in Silicon-on-insulator

出版	University of Glasgow, 2011
URL	http://books.google.com.hk/books?id=9aUCfAEACAAJ&hl=&source=gbs_api

註釋Silicon as a platform for photonics has recently seen a very large increase in interestbecause of its potential to overcome the bandwidth limitations of microprocessorinterconnects and the low manufacturing cost given by the high compatibilitywith the already established micro-electronics industry. There has therefore beena signicant push in silicon photonics research to develop all silicon based opticalcomponents for telecoms applications. The work reported in this Thesis is con-cerned with the design, fabrication and characterisation of coupled ring resonatorson silicon-on-insulator (SOI) material. The nal objective of this work is to pro-vide a robust and reliable technology for the demonstration of optical buers anddelay-lines operating at signal bandwidths up to 100 GHz and in the wavelengthregion around 1550 nm. The core of the activity focused on the optimisationof the fabrication technology and device geometry to ensure the required deviceperformance for the fabrication of long chains of ring resonators. The nal pro-cess has been optimised to obtain both intra-chip and chip-to-chip reproducibilitywith a variability of the process controlled at the nanometre scale. This was madepossible by careful control of all the variables involved in the fabrication process, reduction of the fabrication complexity, close feature-size repeatability, line-edgeroughness reduction, nearly vertical sidewall proles and high uniformity in theebeam patterning. The best optical propagation losses of the realized waveguidesreduced down to 1 dB=cm for 480 220 nm2 rectangular cross-section photonicwires and were consistently kept at typical values of around 1.5 dB=cm. Controlof the coupling coecients between resonators had a standard deviation of lessthan 4 % for dierent realizations and resonance dispersion between resonatorswas below 50 GHz. All these gures represent the state-of-the-art in SOI photon-ics technology. Considerable eort has also been devoted to the development ofecient thermal electrodes (52 W=GHz) to obtain a recongurable behaviour ofthe structure and polymer inverse tapers to improve the o-chip coupling (inser-tion losses