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Germanium-silicon Strained Layers and Heterostructures
Suresh C. Jain
出版Academic Press, 1994
主題Science / Chemistry / GeneralScience / Physics / GeneralScience / Physics / Atomic & MolecularTechnology & Engineering / Electronics / SemiconductorsTechnology & Engineering / Materials Science / GeneralTechnology & Engineering / Optics
ISBN01201459879780120145980
URLhttp://books.google.com.hk/books?id=BYQpAQAAMAAJ&hl=&source=gbs_api
註釋Biaxial strain in coherent GeSi layers grown on Si substrates provides a powerful tool for tailoring bandgaps and band offsets. Extremely high electron and hole mobilities have been obtained in modulation-doped GeSi strained layer heterostructures. Ultra-high-speed Heterojunction Bipolar Transistors and MODFETs, and long wavelength (1 to 20 micrometre) IR Detectors have been fabricated using these layers. Quantum wells, ultra-thin period superlattices, and quantum dots can also be fabricated using the strained layers. These devices were previously implemented using III-V semiconductors. Now they can be fabricated using existing Si technology, which is mature and reliable. GeSi strained layer technology has made it possible to manufacture monolithic Si integrated circuits containing heterojunction devices.