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An Investigation of DC-DC Converter Power Density Using Si and SiC MOSFETS

Matthew Alexander Porter

出版	U.S. Naval Academy, 2010
URL	http://books.google.com.hk/books?id=HBF20AEACAAJ&hl=&source=gbs_api

註釋

This research focuses on a kW-level active-b ridge DC-DC converter. Using two hardware prototypes, the study contrasts the performance of the inverter-bridge section of the converter using either state-of-the-art Silicon (Si) or Silicon Carbide (SiC) MOSFETs. Innovations in SiC MOSFET technology have facilitated reductions in steady-state switch losses and operation at higher device temperatures. By enabling reductions in losses and higher-temperature operation, converter thermal management requirement is decreased. Thus, SiC devices offer the possibility of increased converter power density. Converter power density is evaluated by measuring the maximum power throughput of the converter for a given maximum device junction temperature. The physical volumes of the two converters are held fixed so that throughput power will represent a means of directly quantifying power density. In this paper, the design of the converter is detailed, including gate drivers and snubber circuitry, and testing results are presented.