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Analysis of Intermodulation Distortion for MESFET Small-signal Amplifiers

Imad Saleh Ahmad

出版	Portland State University, 1995
URL	http://books.google.com.hk/books?id=MjFz0AEACAAJ&hl=&source=gbs_api

註釋

Using the nonlinear Volterra series representation, analytical expressions for the third-order intermodulation distortion power and intercept point for a MESFET small-signal amplifier are derived when its equivalent circuit is bilateral and includes the gate-to-drain capacitance (CgJ explicitly as a nonlinear element. Previously developed analytical expressions treated Cgd as a linear element or incorporated it as part of gate-to-source and drainto- source capacitances (Cgs and Cds). These new analytical expressions are then compared with experimental data and good agreement is obtained. The analytical expressions are also used to study the variation of intermodulation distortion with input power, frequency, and source and load impedances. It is shown that the nonlinearity of Cgd contributes significantly to the intermodulation distortion power and the third-order intercept point and therefore should not be neglected in the analysis and design.