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Optical Fiber Telecommunications VIA
註釋This chapter reviews the significant advances in photodetectors that have occurred since Optical Fiber Telecommunications V. The quests for higher speed p-i-n detectors and lower noise avalanche photodiodes (APDs) with high gain-bandwidth product remain. To a great extent, high-speed structures have coalesced to evanescently coupled waveguide devices; bandwidths exceeding 140GHz have been reported. A primary APD breakthrough has been the development of Ge on Si separate-absorption-and-multiplication devices that achieve long-wavelength response with the low-noise behavior of Si. For III–V compound APDs ultra-low noise has been achieved by strategic use of complex multilayer multiplication regions that provide more deterministic impact ionization. However, much of the excitement and innovation have focused on photodiodes that can be incorporated into InP-based integrated circuits and photodetectors for Si photonics.