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A Simple Characterization of Gate-to-substrate Impedance in Metal-oxide-semiconductor Structures Under Nonequilibrium Conditions

Kent William AndresStanford University Stanford Electronics Laboratories

出版	Stanford University, 1968
URL	http://books.google.com.hk/books?id=WWMFAAAAIAAJ&hl=&source=gbs_api

註釋

Common to all MOS field-effect transistors and gate-controlled diodes is a metallurgical junction adjacent to the field-influenced semiconductor surface. This junction plays a very important role in determining the nature of the space-charge region beneath the entire gate. A reverse biased junction can create a condition of nonequilibrium in this region and can also act as a primary source of minority carriers for the formation of an inversion layer. This leads to the possibility of lateral ac potential variations along the surface. A distributed model is proposed to describe the influence of a reverse biased junction on the gate-to-substrate impedance measurements of an MOS device, and expressions are developed to facilitate application to actual devices. This model is capable of predicting the effects of measurement frequency, gate-to-substrate bias, junction reverse bias, and device geometry. (Author).