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SiC Materials and Devices
Michael Shur
Sergey L. Rumyantsev
Mikhail Efimovich Levinshte?n
出版
World Scientific
, 2006
主題
Technology & Engineering / Electronics / Semiconductors
Technology & Engineering / Electrical
Technology & Engineering / Materials Science / General
ISBN
9812568352
9789812568359
URL
http://books.google.com.hk/books?id=WdRoDQAAQBAJ&hl=&source=gbs_api
EBook
SAMPLE
註釋
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices ? power switching Schottky diodes and high temperature MESFETs ? are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.