登入選單
返回Google圖書搜尋
Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon
Peter Pichler
出版Springer Science & Business Media, 2012-12-06
主題Technology & Engineering / Electronics / GeneralScience / Physics / Condensed MatterScience / Chemistry / Physical & TheoreticalScience / Spectroscopy & Spectrum AnalysisTechnology & Engineering / Materials Science / Electronic MaterialsTechnology & Engineering / ElectricalScience / Chemistry / Analytic
ISBN37091059789783709105979
URLhttp://books.google.com.hk/books?id=YR7pCAAAQBAJ&hl=&source=gbs_api
EBookSAMPLE
註釋Basically all properties of semiconductor devices are influenced by the distribution of point defects in their active areas. This book contains the first comprehensive review of the properties of intrinsic point defects, acceptor and donor impurities, isovalent atoms, chalcogens, and halogens in silicon, as well as of their complexes. Special emphasis is placed on compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behavior from experimental and theoretical investigations. In addition, the book discusses the fundamental concepts of silicon and its defects, the electron system, diffusion, thermodynamics, and reaction kinetics which form the scientific basis needed for a thorough understanding of the text. Therefore, the book is able to provide an introduction to newcomers in this field up to a comprehensive reference for experts in process technology, solid-state physics, and simulation of semiconductor processes.