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Low Flux Nuclear Radiation Effects on Electronic Components (BMI-LF-2)
註釋The second of a series of irradiation experiments on electronic devices intended for SNAP reactor control systems is described. Several diode and transistor types, sensistors, capacitors, and an oscillator from a prototype SNAP 10A Startup Controller were irradiated to 3 x 10p15s nvt (>0.1 Mev) and 5 x 10p8s r (gamma) at the Battelle Memorial Institute Research Reactor. Results are presented of in-pile measurements of the critical electrical characteristics, in the form of graphs produced automatically by a computer peripheral plotting facility.