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Organic Thin-film Transistors for Flexible CMOS Integration

Michael Ramon Perez

出版	University of Texas at Dallas, 2013
URL	http://books.google.com.hk/books?id=av0kngEACAAJ&hl=&source=gbs_api

註釋

In this work a fully photolithographically defined complementary metal oxide semiconductor (CMOS) device is fabricated. Particular focus was on the use of solution based materials for device integration. P-type and n-type materials were evaluated for use in an organic thin film transistor (OTFT) device. The reliability and organic thin-film transistor performance of solution based dielectric polymeric dielectric materials are presented. Fabrication and characterization of integrated hybrid complementary metal oxide semiconductor devices (CMOS) using 6, 13-bis (triisopropylsilylethynyl) pentacene (TIPS-PC) and cadmium sulfide (CdS) as the active layers deposited using solution based processes are demonstrated. The hybrid CMOS technology demonstrated is compatible with large-area and mechanically flexible substrates given the low temperature processing (