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Distribution of Energy States at Band Edges in GaAs Laser Diodes

G. J. BurrellTrevor Simpson MossA. Hetherington

出版	Ministry of Technology, 1968
URL	http://books.google.com.hk/books?id=c5F_NwAACAAJ&hl=&source=gbs_api

註釋Experimental observations of gain perpendicular to the junction in a GaAs laser diode at 80 degrees K have been related to the spontaneous emission rate in order to determine the splitting of the quasi-Fermi levels appropriate to the active region of the junction. An analysis of the observed spontaneous emission spectra (corrected for self absorption) has shown that radiative recombination results from transitions between a pair of exponential band tails in which the density of states is of the form rho(E) is proportional to exp E/E sub o. A study of a Zn-diffused diode made from Se-doped GaAs gave rise to values for the parameter E sub o of 8.3 meV for the conduction band and 8.0 meV for the valence band. (Author).