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A Unique High-temperature, High-pressure Crystal Growth System for Silicon Carbide
J. R. LittlerRobert C. MarshallCharles Edward RyanJ. J. HawleyI. Berman
出版Air Force Cambridge Research Laboratories, Air Force Systems Command, United States Air Force, 1973
URLhttp://books.google.com.hk/books?id=c8DTW2QSbn0C&hl=&source=gbs_api
EBookFULL_PUBLIC_DOMAIN
註釋A high-pressure, high-temperature furnace system is described for crystal growth experiments using crucibles up to 13 cm in diameter and 26 cm high. The vertical temperature gradient is electronically controlled during growth such that the ends of the crucible can be maintained at temperatures above or below the crucible center. Temperatures up to 2800C can be maintained at pressures up to 50 atmospheres. A vacuum capability up to .000001 torr at 1800C has been incorporated into the system. Single crystals of alpha silicon carbide grown in this system at 2600C are described to illustrate its use. (Author).