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Topics in High Field Transport in Semiconductors
註釋This book examines some of the charge carrier transport issues encountered in the field of modern semiconductor devices and novel materials. Theoretical approaches to the understanding and modeling of the relevant physical phenomena, seen in devices that have very small spatial dimensions and that operate under high electric field strength, are described in papers written by leading experts and pioneers in this field. In addition, the book examines the transport physics encountered in novel materials such as wide band gap semiconductors (GaN, SiC, etc.) as well as organic semiconductors. Topics in High Field Transport in Semiconductors provides a comprehensive overview that will be beneficial to newcomers as well as engineers and researchers engaged in this exciting field. Contents: Foreword (K F Brennan & P P Ruden); Quantum Transport in Semiconductor Devices (D K Ferry et al.); Quantum Transport and Its Simulation with the Wigner-Function Approach (C Jacoboni et al.); Bloch Dynamics in Spatially Local Inhomogeneous Electric Fields (J P Reynolds et al.); Collision Broadening Through Sequences of Scattering Events: Theory, Consequences and Modeling Within Semiclassical Monte Carlo (L F Register & B Fisher); Transport in a Polarization-Induced 2D Electron Gas (B K Ridley & N A Zakhleniuk); Impact Ionization and High Field Effects in Wide Band Gap Semiconductors (M Reigrotzki et al.); Simulation of Carrier Transport in Wide Band Gap Semiconductors (E Bellotti et al.); Electrical Transport in Organic Semiconductors (I H Campbell & D L Smith). Readership: Researchers and graduate students in the field of semiconductors.