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Google圖書搜尋
Effects of Carrier Lifetime and End-Region Recombination on the Forward Current and Switching Behavior of Power Pin Diodes
RW. Cooper
S. Fagg
DH. Paxman
JAG Slatter
出版
ASTM International
, 1980
URL
http://books.google.com.hk/books?id=gUR9zgEACAAJ&hl=&source=gbs_api
註釋
It has been shown that the on-state current-voltage characteristic of power pin diodes can be expressed in terms of base lifetime, ?B; ratio of base width, W, to diffusion length, LA; and end-region recombination effects, hp and hn. The switching characteristic can be described in terms of a normalized form of these parameters, including the current density, JT, for a range of device dimensions. Independent experimental evaluation of these parameters, together with the theories, has accurately predicted the current-voltage characteristic up to 450 A cm-2 and confirmed the general behavior of the switching characteristics of a set of pin diodes with dimensions in the range 1.5
