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Silicon Carbid, Iii-Nitrides and Related Materials
G. PenslH. MorkocB. Monemar
出版Trans Tech Publications, Limited, 1998
主題Science / Chemistry / GeneralTechnology & Engineering / Chemical & BiochemicalTechnology & Engineering / Materials Science / General
ISBN08784979009780878497904
URLhttp://books.google.com.hk/books?id=k59RAAAAMAAJ&hl=&source=gbs_api
註釋The 348 articles document the present understanding of such areas as the growth of bulk crystals and of epitaxial layers, theoretical approaches, characterizing growth material, developing suitable processes, and electronic devices operating under extreme conditions. More specific topical groups are homoepitaxial and heteroepitaxial growth; surfaces and interfaces; structural, optical, electrical, and magnetic-resonance characterization; thermal and mechanical properties; doping and implanting; contacts and etching; dielectrics; micromachining; unipolar and bipolar devices; and sensors. Each volume contains the subject and author indexes for both. The proceedings of the previous, Sixth, conference were published in the Institute of Physics Conference Series, #142. Annotation copyrighted by Book News, Inc., Portland, OR