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THE LOW-TEMPERATURE THERMAL CHEMICAL VAPOR DEPOSITION AND CATALYZED CHEMICAL VAPOR DEPOSITION OF ALUMINUM NITRIDE AND SILICON NITRIDE (CHEMICAL VAPOR DEPOSITION).

JEFFREY L. DUPUIE

出版	University of MICHIGAN, 1991
URL	http://books.google.com.hk/books?id=mlYeAQAAMAAJ&hl=&source=gbs_api

註釋

The objective of this research was to identify, investigate, and report on promising nitride dielectric films and film chemical vapor deposition processes for compound semiconductor technology. A low pressure chemical vapor deposition reactor system for low temperature dielectric film growth was designed, constructed, and characterized. The initial study explored the low pressure, low temperature thermal chemical vapor deposition of AIN from trimethylaluminum and ammonia. Predictor equations for the AIN