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X-ray Diffraction Microscopy of Imperfections in Semiconductor Crystals

G. H. Schwuttke

出版	Defense Technical Information Center, 1964
URL	http://books.google.com.hk/books?id=vQ8cOAAACAAJ&hl=&source=gbs_api

註釋

Three techniques have been perfected: (1) highintensity x-ray diffraction microscopy by extinction contrast, (2) x-ray diffraction microscopy through scanning oscillator technique, and (3) direct observation of imperfections in semiconductor crystals through anomalous transmission of x-rays. In type I diamonds, long-range strain fields were found to be the dominating imperfection, and dislocations appeared to be closely related to strain centers. Type II diamonds showed a much higher density of edge dislocations with Burgers vectors in (111) planes. The investigations on silicon led to the detection of several new crystal defects not previously known to occur in silicon. It was found that silicon crystals of zero dislocations may contain microstrains and large-area stacking faults. Epitaxial silicon layers were extensively investigated. Defect structures on epitaxial silicon were identified as stacking faults. X-ray diffraction microscopy of shallow-diffused junctions in silicon led to the discovery that diffusion of boron or phosphorus into silicon generates large numbers of crystal defects. The defects were successfully analyzed as dislocations.